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TPM2025

Automotive Dual-Channel Ultra-Highspeed GaN Predriver

Overview

The TPM2025 / TPM2025Q family are low-side dual- channel ultra-highspeed gate drivers for GaN and logic-level MOSFETs. It is optimized for high-speed applications such as Lidar and high-density power convertors with enhanced low propagation delay design. The TPM2025’s 2-mm×2-mm flip-chip QFN package minimizes parasitic inductance in the gate driver power loop and achieves state-of-the-art narrow pulse width as short as 0.69 ns. Channel independent transient suppressors ensure reliable operation with ultra-fast high-current output pulses.


  • Status

    Production

  • Rating

    Industrial

  • VIN(V)

    4.75~5.25

  • Channel

    2

  • Max Output Current(A)

    7

  • Input Voltage Range(V)

    0~5

  • Junction Temperature Range(℃)

    -40 to +150

  • Rise/Fall Time(ns)

    0.45/0.45

  • Propagation Delay(ns)

    2

  • Delay Matching(ns)

    0.05

  • Package

    QFN2X2-10

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